characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 36.5a) zero gate voltage drain current (v ds = 600v, v gs = 0v) zero gate voltage drain current (v ds = 480v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) 050-7097 rev b 9-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 600 0.075 100500 100 35 apt60m75l2ll 600 73 292 3040 893 7.14 -55 to 150 300 7350 3200 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com g d s lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular to-264 max package to-264 max apt60m75l2ll 600v 73a 0.075 ?? ?? ? power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r mosfet downloaded from: http:///
dynamic characteristics 050-7097 rev b 9-2004 apt60m75l2ll note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.160.14 0.12 0.10 0.08 0.06 0.04 0.02 0 0.5 0.1 0.3 0.7 0.9 0.05 characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 73a ) reverse recovery time (i s = - 73a , dl s /dt = 100a/s) reverse recovery charge (i s = - 73a , dl s /dt = 100a/s) peak diode recovery dv / dt 5 unit amps volts ns c v/ns min typ max 73 292 1.3 857 26 8 symbol r jc r ja min typ max 0.14 40 unitc/w characteristicjunction to case junction to ambient symbol i s i sm v sd t rr q rr dv / dt symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 300v i d = 73a @ 25c resistive switching v gs = 15v v dd = 300v i d = 73a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 400v, v gs = 15v i d = 73a, r g = 5 ? inductive switching @ 125c v dd = 400v v gs = 15v i d = 73a, r g = 5 ? min typ max 89301130 50 195 48 100 2319 55 8 15151745 2345 1950 unit pf nc ns j source-drain diode ratings and characteristics thermal characteristics 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 1.20mh, r g = 25 ? , peak i l = 73a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 73a di / dt 700a/s v r 600v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. downloaded from: http:///
050-7097 rev b 9-2004 apt60m75l2ll typical performance curves 200180 160 140 120 100 8060 40 20 0 1.401.30 1.20 1.10 1.00 0.90 0.80 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 8v 5.5v 6v 6.5 v gs =15 &10v 7v 7.5v v gs =10v v gs =20v t j = +125c t j = +25c v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, lo w voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds(on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, r ds(on) vs. temperature figure 9, threshold voltage vs temperature v ds > i d (on) x r ds(on) max. 250sec. pulse test @ <0.5 % duty cycle r ds(on) , drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs(th) , threshold voltage bv dss , drain-to-source breakdown r ds(on) , drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 1 2 3 4 5 6 7 8 9 0 20 40 60 80 100 120 140 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 normalized to v gs = 10v @ i d = 36.5a i d = 36.5a v gs = 10v 180160 140 120 100 8060 40 20 0 8070 60 50 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 t j = -50c 0.04840.0903 0.0236f0.400f power (watts) rc model junctiontemp. ( c) case temperature. ( c) downloaded from: http:///
050-7097 rev b 9-2004 apt60m75l2ll 1ms 100s t c =+25c t j =+150c single pulse operation here limited by r ds (on) v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charge vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 10 100 600 0 10 20 30 40 50 0 50 100 150 200 250 300 0.3 0.5 0.7 0.9 1.1 1.3 1.5 292100 5010 1 1612 84 0 v ds = 300v v ds = 120v v ds = 480v i d = 73a t j =+150c t j =+25c c rss c iss c oss 10ms 20,00010,000 1,000 100 10 200100 10 1 i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 400v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f e on and e off ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) 10 30 50 70 90 110 130 10 30 50 70 90 110 130 10 30 50 70 90 110 130 0 5 10 15 20 25 30 35 40 45 50 v dd = 400v r g = 5 ? t j = 125c l = 100h v dd = 400v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery v dd = 400v i d = 73a t j = 125c l = 100h e on includes diode reverse recovery 180160 140 120 100 8060 40 20 0 80007000 6000 5000 4000 3000 2000 1000 0 160140 120 100 8060 40 20 0 50004000 3000 2000 1000 0 downloaded from: http:///
050-7097 rev b 9-2004 apt60m75l2ll 19.51 (.768)20.50 (.807) 19.81 (.780)21.39 (.842) 25.48 (1.003)26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030)1.30 (.051) 4.60 (.181)5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019)0.84 (.033) drain source gate dimensions in millimeters and (inches) drain 2.29 (.090)2.69 (.106) 5.79 (.228)6.20 (.244) 2.79 (.110)3.18 (.125) 5.45 (.215) bsc 2-plcs. to-264 max tm (l2) package outline apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. figure 18, turn-on switching waveforms and definitions figure 19, turn-off switching waveforms and definitions drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt60df60 switching energy drain current drain voltage gate voltage t j 125c 10% 0 t d(off) 90% t f 90% downloaded from: http:///
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